? semiconductor components industries, llc, 2011 november, 2011 ? rev. 5 1 publication order number: mmbfj309lt1/d mmbfj309l, mmbfj310l, SMMBFJ310L jfet - vhf/uhf amplifier transistor n ? channel features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit drain ? source voltage v ds 25 vdc gate ? source voltage v gs 25 vdc gate current i g 10 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com sot ? 23 (to ? 236) case 318 style 10 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. mmbfj309lt1g sot ? 23 (pb ? free) 3,000 / tape & reel 1 2 3 mmbfj310lt1g sot ? 23 (pb ? free) 3,000 / tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. 1 6x m 6x = device code x = u for mmbfj309l x = t for mmbfj310l, SMMBFJ310L m = date code* = pb ? free package (note: microdot may be in either location) marking diagram 2 source 3 gate 1 drain SMMBFJ310Lt1g sot ? 23 (pb ? free) 3,000 / tape & reel SMMBFJ310Lt3g sot ? 23 (pb ? free) 10,000 / tape & reel
mmbfj309l, mmbfj310l, SMMBFJ310L http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate ? source breakdown voltage (i g = ? 1.0 adc, v ds = 0) v (br)gss ? 25 ? ? vdc gate reverse current (v gs = ? 15 vdc) gate reverse current (v gs = ? 15 vdc, t a = 125 c) i gss ? ? ? ? ? 1.0 ? 1.0 nadc adc gate source cutoff voltage mmbfj309 (v ds = 10 vdc, i d = 1.0 nadc) mmbfj310, smmbfj310 v gs(off) ? 1.0 ? 2.0 ? ? ? 4.0 ? 6.5 vdc on characteristics zero ? gate ? voltage drain current mmbfj309 (v ds = 10 vdc, v gs = 0) mmbfj310, smmbfj310 i dss 12 24 ? ? 30 60 madc gate ? source forward voltage (i g = 1.0 madc, v ds = 0) v gs(f) ? ? 1.0 vdc small ? signal characteristics forward transfer admittance (v ds = 10 vdc, i d = 10 madc, f = 1.0 khz) |y fs | 8.0 ? 18 mmhos output admittance (v ds = 10 vdc, i d = 10 madc, f = 1.0 khz) |y os | ? ? 250 mhos input capacitance (v gs = ? 10 vdc, v ds = 0 vdc, f = 1.0 mhz) c iss ? ? 5.0 pf reverse transfer capacitance (v gs = ? 10 vdc, v ds = 0 vdc, f = 1.0 mhz) c rss ? ? 2.5 pf equivalent short ? circuit input noise voltage (v ds = 10 vdc, i d = 10 madc, f = 100 hz) e n ? 10 ? nv hz
mmbfj309l, mmbfj310l, SMMBFJ310L http://onsemi.com 3 70 60 50 40 30 20 , saturation drain current (ma) -5.0 -4.0 -3.0 -2.0 -1.0 0 i d - v gs , gate-source voltage (volts) i dss 10 0 70 60 50 40 30 20 10 , drain current (ma) i d i dss - v gs , gate-source cutoff voltage (volts) figure 1. drain current and transfer characteristics versus gate ? source voltage v ds = 10 v i dss +25 c t a = -55 c +25 c +25 c -55 c +150 c +150 c i d , drain current (ma) 100 k 10 k 1.0 k 100 1.0 k 100 10 1.0 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 , forward transconductance ( mhos) y fs , output admittance ( mhos) y os v gs(off) = -2.3 v = v gs(off) = -5.7 v = figure 2. common ? source output admittance and forward transconductance versus drain current y fs y fs y os v gs , gate source voltage (volts) 5.0 4.0 3.0 2.0 1.0 0 6.0 7.0 8.0 9.0 10 capacitance (pf) 10 7.0 4.0 1.0 0 120 96 72 48 24 0 , on resistance (ohms) r ds r ds c gs c gd figure 3. on resistance and junction capacitance versus gate ? source voltage
mmbfj309l, mmbfj310l, SMMBFJ310L http://onsemi.com 4 |y 11 |, |y 21 |, |y 22 | (mmhos) y 12 (mmhos) 30 24 18 12 6.0 0 1000 100 200 300 500 700 f, frequency (mhz) 3.0 2.4 1.8 1.2 0.6 |s 21 |, |s 11 | 0.45 0.39 0.33 0.27 0.21 0.15 0.85 0.79 0.73 0.67 0.61 0.55 |s 12 |, |s 22 | 0.060 0.048 0.036 0.024 0.012 1.00 0.98 0.96 0.94 0.92 0.90 1000 100 200 300 500 700 f, frequency (mhz) figure 4. common ? gate y parameter magnitude versus frequency figure 5. common ? gate s parameter magnitude versus frequency v ds = 10 v i d = 10 ma t a = 25 c y 11 y 21 y 22 y 12 s 22 s 21 s 11 s 12 v ds = 10 v i d = 10 ma t a = 25 c f, frequency (mhz) 21 , 11 50 40 30 20 10 0 180 170 160 150 140 130 12 , 22 -2 0 -40 -80 -120 -160 -200 -20 -60 -100 -140 -180 87 86 85 84 83 82 1000 100 200 300 500 700 figure 6. common ? gate y parameter phase ? angle versus frequency f, frequency (mhz) 11 , 12 120 100 80 60 40 20 -20 -40 -60 -80 -100 -120 21 , 22 0 -40 -80 -20 -60 -100 1000 100 200 300 500 700 figure 7. s parameter phase ? angle versus frequency 22 21 12 11 v ds = 10 v i d = 10 ma t a = 25 c 11 21 22 21 11 12 v ds = 10 v i d = 10 ma t a = 25 c
mmbfj309l, mmbfj310l, SMMBFJ310L http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 10: pin 1. drain 2. source 3. gate *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbfj309lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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